Quenching of electroluminescence and charge trapping in high-efficiency Ge-implanted MOS light-emitting silicon diodes

Author： Nazarov A.N.   Osiyuk I.N.   Sun J.M.   Yankov R.A.   Skorupa W.   Tyagulskii I.P.   Lysenko V.S.   Prucnal S.   Gebel T.   Rebohle L.  

Publisher： Springer Publishing Company

ISSN： 0946-2171

Source： Applied Physics B, Vol.87, Iss.1, 2007-03, pp. : 129-134

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