Determination of trapping–detrapping events, recombination processes and gap-state parameters by modulated photocurrent measurements on amorphous silicon

Author： Pomoni M.   Kounavis P.  

Publisher： Taylor & Francis Ltd

ISSN： 1478-6443

Source： Philosophical Magazine, Vol.94, Iss.21, 2014-07, pp. : 2447-2471

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

Energy-resolved photon flux dependence of the steady state photoconductivity in hydrogenated amorphous silicon: implications for the constant photocurrent method

By Schmidt J.A.   Koropecki R.R.   Arce R.D.   Rubinelli F.A.   Buitrago R.H.  

Thin Solid Films, Vol. 376, Iss. 1, 2000-11 ,pp. : 267-274

Elsevier

Access to resources Recommend Favorite

On the non-exponential photocurrent decay in hydrogenated amorphous silicon

By Shimakawa K.  

Philosophical Magazine Letters, Vol. 74, Iss. 4, 1996-10 ,pp. : 289-293

Taylor & Francis Ltd

Access to resources Recommend Favorite

Determination of recombination and photogeneration parameters of a-Si:H using photoconductivity measurements

By Nowak M.   Grabowski A.   Tzanetakis P.  

Thin Solid Films, Vol. 283, Iss. 1, 1996-09 ,pp. : 75-80

Elsevier

Access to resources Recommend Favorite

Luminescence and recombination in hydrogenated amorphous silicon

By Street R.A.  

Advances In Physics, Vol. 30, Iss. 5, 1981-10 ,pp. : 593-676

Taylor & Francis Ltd

Access to resources Recommend Favorite

Determination of surface states in hydrogenated amorphous silicon by subgap absorption measurements

By Sinha A. K.   Agarwal S. C.  

Philosophical Magazine B, Vol. 77, Iss. 4, 1998-04 ,pp. : 945-957

Taylor & Francis Ltd

Access to resources Recommend Favorite