Landau level transitions in InAs/AlSb/GaSb quantum wells

E-ISSN： 1741-4199|24|9|97301-97306

ISSN： 1674-1056

Source： Chinese Physics B, Vol.24, Iss.9, 2015-09, pp. : 97301-97306

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

The electronic structure of InAs/AlSb/GaSb quantum wells embedded in AlSb barriers and in the presence of a perpendicular magnetic field is studied theoretically within the 14-band k·p approach without making the axial approximation. At zero magnetic field, for a quantum well with a wide InAs layer and a wide GaSb layer, the energy of an electron-like subband can be lower than the energy of hole-like subbands. As the strength of the magnetic field increases, the Landau levels of this electron-like subband grow in energy and intersect the Landau levels of the hole-like subbands. The electron–hole hybridization leads to a series of anti-crossing splittings of the Landau levels. The magnetic field dependence of some dominant transitions is shown with their corresponding initial-states and final-states indicated. The dominant transitions at high fields can be roughly viewed as two spin-split Landau level transitions with many electron–hole hybridization-induced splittings. When the magnetic field is tilted, the electron-like Landau level transitions show additional anti-crossing splittings due to the subband-Landau level coupling.