Effects of Substrate Temperature on the Properties of Cu(In,Ga)Se₂ Thin Films Prepared by Sputtering from a Quaternary Target

Publisher： Trans Tech Publications

E-ISSN： 1662-8985|2014|1061|209-214

ISSN： 1022-6680

Source： Advanced Materials Research, Vol.2014, Iss.1061, 2015-01, pp. : 209-214

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Abstract

Cu (In,Ga)Se₂ (CIGS) thin films were prepared by direct magnetron sputtering CIGS quaternary target at the substrate temperature varying from room temperature (RT) to 300 °C. The effects of substrate temperature on the structural and electrical properties of CIGS films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray (EDX) and Hall effect measurement. The CIGS thin films with a chalcopyrite structure were obtained between 100 and 300 °C and the crystallinity of films were enhanced with the increase of the substrate temperature from 100 to 300 °C. The film compositions were consisted with the target when the substrate temperatures were between RT and 200 °C, however, it deviated from the stoichiometry of the target when the substrate temperature was 300 °C. The CIGS films deposited at 200 °C had the higher carrier mobility of 3.522 cm²/Vs.