Verification of Theoretical Model for Tunneling Currents in Al/SiO₂/p-Si MOS Capacitors with Nanometer-Thick Oxides

E-ISSN： 1662-8985|2015|1112|37-40

ISSN： 1022-6680

Source： Advanced Materials Research, Vol.2015, Iss.1112, 2015-08, pp. : 37-40

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