Publisher： Trans Tech Publications
E-ISSN： 1662-9795|2015|645|86-91
ISSN： 1013-9826
Source： Key Engineering Materials, Vol.2015, Iss.645, 2015-06, pp. : 86-91
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
During making the surface acoustic wave devices and integrated circuit hybrid integrated electronics, it needs to put the piezoelectric crystal and silicon wafer bonding together. By selecting a certain wavelengths of UV curing adhesive, then exposing with 300-436nm wavelength of exposure machine, 8mm×8mm bonding chips are got. Bonding LiNbO3, quartz and silicon wafer respectively, measured maximum shear force is 116.2 N and 117.9 N with shear force test machine. The fracture energy is 5.831 J/m2 measured by crack-opening method test LiNbO3 bonding chips. The results show that piezoelectric crystal and silicon wafer bonding interface level off and the bonding of the middle layer thickness for about 3 microns observed the bonding section with SEM.
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