Reliable 4H-SiC MOSFET with High Threshold Voltage by Al₂O₃-Inserted Gate Insulator

E-ISSN： 1662-9752|2015|821|725-728

ISSN： 0255-5476

Source： Materials Science Forum, Vol.2015, Iss.821, 2015-07, pp. : 725-728

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