Investigation of the Breakdown Voltage in High Voltage 4H-SiC BJT with Respect to Oxide and Interface Charges

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Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. : 834-837

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Modification of Etched Junction Termination Extension for the High Voltage 4H-SiC Power Devices

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Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. : 978-981

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Robust Double-Ring Junction Termination Extension Design for High Voltage Power Semiconductor Devices Based on 4H-SiC

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Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. : 656-659

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Improvement of Current Gain and Breakdown Voltage in 4H-SiC BJTs Employing High-k Dielectric as an Interfacial Layer

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Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. : 818-821

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Low Resistance Ti-Si-C Ohmic Contacts for 4H-SiC Power Devices Using Laser Annealing

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Materials Science Forum, Vol. 2017, Iss. 897, 2017-06 ,pp. : 399-402

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