Publisher： Trans Tech Publications
E-ISSN： 1662-9752|2015|821|640-643
ISSN： 0255-5476
Source： Materials Science Forum, Vol.2015, Iss.821, 2015-07, pp. : 640-643
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
High Performance of 5.7kV 4H-SiC JBSs with Optimized Non-Uniform Field Limiting Rings Termination
Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. :
Access to resources
Recommend
Ion Implanted Lateral p+-i-n+ Diodes on HPSI 4H-SiC
Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. :
4H-SiC n-Channel DMOS IGBTs on (0001) and (000-1) Oriented Lightly Doped Free-Standing Substrates
Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. :
Observation of the Surface Morphology on the (0001)C Facet of 4H-SiC Boules
Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. :
Extension of Stacking Faults in 4H-SiC pn Diodes under a High Current Pulse Stress
Materials Science Forum, Vol. 2017, Iss. 897, 2017-06 ,pp. :