Publisher： Trans Tech Publications
E-ISSN： 1662-9752|2015|821|472-475
ISSN： 0255-5476
Source： Materials Science Forum, Vol.2015, Iss.821, 2015-07, pp. : 472-475
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Access to resources
Recommend
Trapping States in SiO2/GaN MOS Capacitors Fabricated on Recessed AlGaN/GaN Heterostructures
Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. :
A vertical MOS-gated Esaki tunneling transistor in silicon
By Hansch W. Fink C. Schulze J. Eisele I.
Thin Solid Films, Vol. 369, Iss. 1, 2000-07 ,pp. :
Step bunching and correlated SiGe nanostructures on Si(113)
By Brunner K. Zhu J. Abstreiter G. Kienzle O. Ernst F.
Thin Solid Films, Vol. 369, Iss. 1, 2000-07 ,pp. :
Direct Observation of Dielectric Breakdown at Step-Bunching on 4H-SiC
Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. :