Probing at Nanoscale Underneath the Gate Oxides in 4H-SiC MOS-Based Devices Annealed in N

E-ISSN： 1662-9752|2014|806|143-147

ISSN： 0255-5476

Source： Materials Science Forum, Vol.2014, Iss.806, 2015-01, pp. : 143-147

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