Ge Assisted 3C-SiC Nucleation and Growth by Vapour Phase Epitaxy on On-Axis 4H-SiC Substrate

Publisher: Trans Tech Publications

E-ISSN: 1662-9752|2014|806|27-31

ISSN: 0255-5476

Source: Materials Science Forum, Vol.2014, Iss.806, 2015-01, pp. : 27-31

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Abstract