Publisher: Trans Tech Publications
E-ISSN: 1662-9752|2015|821|22-25
ISSN: 0255-5476
Source: Materials Science Forum, Vol.2015, Iss.821, 2015-07, pp. : 22-25
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Solvent Design for High-Purity SiC Solution Growth
Materials Science Forum, Vol. 2017, Iss. 897, 2017-06 ,pp. :
3C-SiC Crystal on Sapphire by Solution Growth Method
Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. :
Effect of Various Crucibles for High Quality AIN Crystal Growth on SiC Seed by PVT Method
Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. :