Publisher： Trans Tech Publications
E-ISSN： 1662-9752|2015|821|893-896
ISSN： 0255-5476
Source： Materials Science Forum, Vol.2015, Iss.821, 2015-07, pp. : 893-896
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Access to resources
Recommend
High Performance 1.2kV-2.5kV 4H-SiC MOSFETs with Excellent Process Capability and Robustness
Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. :
Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. :
Design Optimization of a High Temperature 1.2 kV 4H-SiC Buried Grid JBS Rectifier
Materials Science Forum, Vol. 2017, Iss. 897, 2017-06 ,pp. :
High Performance of 5.7kV 4H-SiC JBSs with Optimized Non-Uniform Field Limiting Rings Termination
Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. :