Improvement of Current Gain and Breakdown Voltage in 4H-SiC BJTs Employing High-k Dielectric as an Interfacial Layer

Publisher： Trans Tech Publications

E-ISSN： 1662-9752|2015|821|818-821

ISSN： 0255-5476

Source： Materials Science Forum, Vol.2015, Iss.821, 2015-07, pp. : 818-821

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