Property of an AlGaN/GaN MIS Diode with Si₃N₄/Al₂O₃ Bilayer Gate Dielectric Films

E-ISSN： 1662-9752|2015|815|30-35

ISSN： 0255-5476

Source： Materials Science Forum, Vol.2015, Iss.815, 2015-05, pp. : 30-35

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