Effect of Cr/In-doping on the crystalline quality of bulk ZnTe crystals grown from Te solution by temperature gradient solution growth (TGSG) method

Author： Rui Yang Wanqi Jie Xiaoyan Sun Min Yang

Publisher： IOP Publishing

ISSN： 1674-4926

Source： Journal of Semiconductors, Vol.36, Iss.9, 2015-09, pp. : 93006-93011

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Microstructure of Heteroepitaxial ZnTe Grown by Molecular Beam Epitaxy on Si(211) Substrates

By Wang X.

Journal of Electronic Materials, Vol. 40, Iss. 8, 2011-08 ,pp. : 1860-1866

Springer Publishing Company

Access to resources Recommend Favorite

X-ray Diffraction Imaging of Improved Bulk-Grown CdZnTe(211) and Its Comparison with Epitaxially Grown CdTe Buffer Layers on Si and Ge Substrates

By Markunas J.

Journal of Electronic Materials, Vol. 39, Iss. 6, 2010-06 ,pp. : 738-742

Springer Publishing Company

Access to resources Recommend Favorite

(211)-Oriented Domain Formation During Growth of ZnTe on m-Plane Sapphire by MBE

By Nakasu Taizo Kobayashi Masakazu Togo Hiroyoshi Asahi Toshiaki

Journal of Electronic Materials, Vol. 43, Iss. 4, 2014-04 ,pp. : 921-925

Springer Publishing Company

Access to resources Recommend Favorite

In-situ control of temperature and alloy composition of Cd 1−x Zn x Te grown by molecular beam epitaxy

By Daraselia M. Brill G. Garland J. Nathan V. Sivananthan S.

Journal of Electronic Materials, Vol. 29, Iss. 6, 2000-06 ,pp. : 742-747

Springer Publishing Company

Access to resources Recommend Favorite

Growth of GaN Crystals by the Na Flux Method Under a Temperature Gradient

By Zhou Mingbin Li Zhenrong Li Jingsi Fan Shiji Xu Zhuo

Journal of Electronic Materials, Vol. 43, Iss. 4, 2014-04 ,pp. : 1219-1225

Springer Publishing Company

Access to resources Recommend Favorite