Nonpolar p-GaN/n-Si heterojunction diode characteristics: a comparison between ensemble and single nanowire devices

Author: Patsha Avinash   Pandian Ramanathaswamy   Dhara Sandip   Tyagi A K  

Publisher: IOP Publishing

E-ISSN: 1361-6463|48|39|395102-395108

ISSN: 0022-3727

Source: Journal of Physics D: Applied Physics, Vol.48, Iss.39, 2015-10, pp. : 395102-395108

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