Author: Gomes U P Ercolani D Sibirev N V Gemmi M Dubrovskii V G Beltram F Sorba L
Publisher: IOP Publishing
E-ISSN: 1361-6528|26|41|415604-415614
ISSN: 0957-4484
Source: Nanotechnology, Vol.26, Iss.41, 2015-10, pp. : 415604-415614
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Conditions for high yield of selective-area epitaxy InAs nanowires on SiOx/Si(111) substrates
Nanotechnology, Vol. 26, Iss. 46, 2015-11 ,pp. :