Statistical Modeling of Gate Capacitance Variations Induced by Random Dopants in Nanometer MOSFETs Reserving Correlations

Author： Wei-Feng Lü Guang-Yi Wang Mi Lin Ling-Ling Sun

Publisher： IOP Publishing

E-ISSN： 1741-3540|32|10|108502-108504

ISSN： 0256-307X

Source： Chinese Physics Letters, Vol.32, Iss.10, 2015-10, pp. : 108502-108504

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