Enhancement of sub-terahertz detection by drain-to-source biasing on strained silicon MODFET devices

Publisher: IOP Publishing

E-ISSN: 1742-6596|647|1|35-38

ISSN: 1742-6596

Source: Journal of Physics: Conference Series , Vol.647, Iss.1, 2015-10, pp. : 35-38

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Abstract