Comparison of phonon scattering in nanowire field effect transistors with Si, GaAs and InGaAs cores using the NEGF formalism

Publisher： IOP Publishing

E-ISSN： 1742-6596|647|1|83-86

ISSN： 1742-6596

Source： Journal of Physics: Conference Series , Vol.647, Iss.1, 2015-10, pp. : 83-86

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