Monte Carlo simulation of V/III flux ratio influence on GaAs island nucleation during MBE

Publisher： IOP Publishing

E-ISSN： 1742-6596|681|1|264-269

ISSN： 1742-6596

Source： Journal of Physics: Conference Series , Vol.681, Iss.1, 2016-02, pp. : 264-269

Access to resources Favorite

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

Roles of V/III ratio and mixture degree in GaN growth: CFD and MD simulation study

By An Zhou   Xiang-Qian Xiu   Rong Zhang   Zi-Li Xie   Xue-Mei Hua   Bin Liu   Ping Han   Shu-Lin Gu   Yi Shi   You-Dou Zheng  

Chinese Physics B, Vol. 22, Iss. 1, 2013-01 ,pp. : 17801-17805

IOP Publishing

Access to resources Recommend Favorite

Monte Carlo Simulation of THz-Pulse Generation from Bulk GaAs Surface

By Liu Dongfeng   Qin Jiayin  

International Journal of Infrared and Millimeter Waves, Vol. 24, Iss. 12, 2003-12 ,pp. : 2127-2137

Springer Publishing Company

Access to resources Recommend Favorite

Self-catalyzed GaAs and InAs nanowire growth (Monte Carlo simulation)

By  

Journal of Physics: Conference Series , Vol. 690, Iss. 1, 2016-02 ,pp. : 64-69

IOP Publishing

Access to resources Recommend Favorite

Monte Carlo simulation of the electron drift velocity in a one-dimensional GaAs quantum wire

By Borzdov V.   Zhevnyak O.   Mulyarchik S.   Khomich A.  

Technical Physics Letters, Vol. 23, Iss. 2, 1997-02 ,pp. : 98-99

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Monte Carlo simulation of THz radiation detection in GaAs n+nn+ diodes with inhomogeneously doped n-region

By  

Journal of Physics: Conference Series , Vol. 193, Iss. 1, 2009-11 ,pp. : 278-281

IOP Publishing

Access to resources Recommend Favorite