Performance analysis of resistive switching devices based on BaTiO3 thin films

Publisher： IOP Publishing

E-ISSN： 1757-899X|108|1|278-281

ISSN： 1757-899X

Source： IOP Conference Series: Materials Science and Engineering, Vol.108, Iss.1, 2016-03, pp. : 278-281

Access to resources Favorite

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

Impact of oxygen vacancy related defects on the electrical properties of BaTiO3 based metal-insulator-metal devices

By  

IOP Conference Series: Materials Science and Engineering, Vol. 8, Iss. 1, 2010-02 ,pp. : 138-141

IOP Publishing

Access to resources Recommend Favorite

Resistive switching of Ti/HfO2-based memory devices: impact of the atmosphere and the oxygen partial pressure

By  

IOP Conference Series: Materials Science and Engineering, Vol. 41, Iss. 1, 2012-12 ,pp. : 103-106

IOP Publishing

Access to resources Recommend Favorite

Resistive Switching Behavior of Ti/ZnO/Mo Thin Film Structure for Nonvolatile Memory Applications

By  

Key Engineering Materials, Vol. 2015, Iss. 659, 2015-09 ,pp. : 588-592

Trans Tech Publications

Access to resources Recommend Favorite

Dielectric properties of BaTiO3 based materials with addition of transition metal ions with variable valence

By  

IOP Conference Series: Materials Science and Engineering, Vol. 49, Iss. 1, 2013-12 ,pp. : 206-209

IOP Publishing

Access to resources Recommend Favorite

Influence of oxygen vacancy on resistive switching property of Ag/Nb:SrTiO3/Ti structure

By Shen J X   Qian H Q   Zhang Y   Wang G F   Shen J Q   Wang S L   Cui C   Li P G   Lei M   Tang W H  

Materials Technology: Advanced Performance Materials, Vol. 28, Iss. 6, 2013-11 ,pp. : 375-379

Maney Publishing

Access to resources Recommend Favorite