A high-gain high-power amplifier MMIC for V-band applications using 100 nm AlGaN/GaN dual-gate HEMTs

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International Journal of Microwave and Wireless Technologies, Vol. 4, Iss. 3, 2012-06 ,pp. : 267-274

Cambridge University Press

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6–12 GHz double-balanced image-reject mixer MMIC in 0.25 µm AlGaN/GaN technology

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International Journal of Microwave and Wireless Technologies, Vol. 7, Iss. 3-4, 2015-06 ,pp. : 307-315

Cambridge University Press

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AlGaN/GaN epitaxy and technology

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International Journal of Microwave and Wireless Technologies, Vol. 2, Iss. 1, 2010-02 ,pp. : 3-11

Cambridge University Press

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Electrical performances of AlInN/GaN HEMTs. A comparison with AlGaN/GaN HEMTs with similar technological process

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International Journal of Microwave and Wireless Technologies, Vol. 3, Iss. 3, 2011-06 ,pp. : 301-309

Cambridge University Press

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A new nonlinear HEMT model for AlGaN/GaN switch applications

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International Journal of Microwave and Wireless Technologies, Vol. 2, Iss. 3-4, 2010-08 ,pp. : 283-291

Cambridge University Press

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