GaN HFET MMICs with integrated Schottky-diode for highly efficient digital switch-mode power amplifiers at 2 GHz
Publisher： Cambridge University Press
E-ISSN： 1759-0795|3|3|319-327
ISSN： 1759-0787
Source： International Journal of Microwave and Wireless Technologies, Vol.3, Iss.3, 2011-06, pp. : 319-327
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