Publisher： Cambridge University Press
E-ISSN： 1759-0795|2|5|453-456
ISSN： 1759-0787
Source： International Journal of Microwave and Wireless Technologies, Vol.2, Iss.5, 2010-10, pp. : 453-456
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Abstract
We present detailed results of the self-consistent analysis of carbon nanotube (CNT) field-effect transistors (FET), previously extended by us to the case of multi-walled/multi-band coherent carrier transport. The contribution to charge transport, due to different walls and sub-bands of a multi-walled CNT, is shown to be generally non-negligible. In order to prove the effectiveness of our simulation tool, we provide interesting examples about current–voltage characteristics of four-walled semi-conducting nanotubes, including details of numerical convergence and contribution of sub-bands to the calculation.
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