Publisher: Trans Tech Publications
E-ISSN: 1662-9795|2016|705|186-189
ISSN: 1013-9826
Source: Key Engineering Materials, Vol.2016, Iss.705, 2016-09, pp. : 186-189
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Abstract
Polymer-oxide semiconductor exhibits a promising application on electronic devices. In this study, zinc oxide-polyaniline (ZnO-PAni) junctions were constructed which showed a photodiode-like behavior. The junctions were built through connecting the electrodeposited zinc oxide to electrodeposited HCl-doped polyaniline. Without illumination, the junctions exemplify a diode-like behavior (e.g., large amount current at forward-bias while small amount of current at reverse-bias). When illuminated, the junctions exhibit a photodiode-like behavior. In such, the reverse-bias current increases with light intensity.
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