Theoretical Investigations of Some Physical Properties of HgX (X = S, Se and Te) Semiconducting Compounds

Publisher: Trans Tech Publications

E-ISSN: 1662-8985|2016|1141|153-155

ISSN: 1022-6680

Source: Advanced Materials Research, Vol.2016, Iss.1141, 2016-10, pp. : 153-155

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content