Author: Sun C.C. You A.H. Wong E.K.
Publisher: Edp Sciences
E-ISSN: 1286-0050|60|1|10204-10204
ISSN: 1286-0042
Source: EPJ Applied Physics (The), Vol.60, Iss.1, 2012-10, pp. : 10204-10204
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Si doping superlattice structure on 6H-SiC(0001)
By Li Lianbi
MATEC Web of conference, Vol. 130, Iss. issue, 2017-10 ,pp. :
Stacking faults in heavily nitrogen doped 4H-SiC
By Irmscher K. Doerschel J. Rost H. -J. Schulz D. Siche D. Nerding M. Strunk H. P.
EPJ Applied Physics (The), Vol. 27, Iss. 1-3, 2010-03 ,pp. :
Cathodoluminescence microscopy and spectroscopy of n-type 4H-SiC epilayers
EPJ Applied Physics (The), Vol. 27, Iss. 1-3, 2010-03 ,pp. :
Improvements in Realizing 4H-SiC Thermal Neutron Detectors
By Issa F.
EPJ Web of Conference, Vol. 106, Iss. issue, 2016-02 ,pp. :
By Huguet-Garcia Juan Jankowiak Aurélien Miro Sandrine Podor Renaud Meslin Estelle Thomé Lionel Serruys Yves Costantini Jean-Marc
EPJ Nuclear Sciences & Technologies, Vol. 1, Iss. issue, 2015-12 ,pp. :