Electrical characterization and modelization of CaCu3Ti4O12 polycrystalline ceramics*

Author: Cheballah Chafe  

Publisher: Edp Sciences

E-ISSN: 1286-0050|70|3|30902-30902

ISSN: 1286-0042

Source: EPJ Applied Physics (The), Vol.70, Iss.3, 2015-06, pp. : 30902-30902

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Abstract

Since the observation almost 15 years ago of the so-called “colossal” dielectric permittivity behavior in CaCu3Ti4O12 (CCTO) ceramics, several works have been undertaken to understand its physical origin interfacial polarization being the most likelihood. In this paper, (C-V) measurements, commonly used on semiconducting materials have been used to characterize CCTO samples. Their results may be described by a head-to-tail double metal-insulating-semiconductor (MIS) structure. A comparison between experimental and numerical simulation results of such a structure shows a good agreement, whatever the frequency range. Furthermore, this model explains the non-symmetrical behavior of the electrical response of this material, a property still not taken into account by today’s commonly known models.

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