Incomplete oxidation in back channel of GaInZnO thin-film transistor grown by rf sputtering

E-ISSN： 1286-0050|54|1|10302-10302

ISSN： 1286-0042

Source： EPJ Applied Physics (The), Vol.54, Iss.1, 2011-04, pp. : 10302-10302

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Piezoelectric Response Evaluation of ZnO Thin Film Prepared by RF Magnetron Sputtering

MATEC Web of conference, Vol. 109, Iss. issue, 2017-05 ,pp. : 04001-04001

Edp Sciences

Access to resources Recommend Favorite

Anomalous capacitance change in low-temperature grown ZnO thin-film transistors

By Seo O. Kim H. Jo J.

EPJ Applied Physics (The), Vol. 52, Iss. 1, 2010-09 ,pp. : 10501-10501

Edp Sciences

Access to resources Recommend Favorite

Testing of flexible InGaZnO-based thin-film transistors under mechanical strain

By Münzenrieder N.S. Cherenack K.H. Tröster G.

EPJ Applied Physics (The), Vol. 55, Iss. 2, 2011-08 ,pp. : 23904-23904

Edp Sciences

Access to resources Recommend Favorite

Annealing dependence on flexible p-CuGaO₂/n-ZnO heterojunction diode deposited by RF sputtering method

By Lam Mui Li

EPJ Web of Conference, Vol. 162, Iss. issue, 2017-11 ,pp. : 01061-01061

Edp Sciences

Access to resources Recommend Favorite

Physico-chemical characterization of multilayer YIG thin film deposited by rf sputtering

By Abdel Samad B. Blanc-Mignon M.-F. Roumie M. Siblini A. Chatelon J. P. Korek M.

EPJ Applied Physics (The), Vol. 50, Iss. 1, 2010-04 ,pp. : 10502-10502

Edp Sciences

Access to resources Recommend Favorite