Publisher: Edp Sciences
E-ISSN: 1764-7177|02|C2|C2-889-C2-895
ISSN: 1155-4339
Source: Le Journal de Physique IV, Vol.02, Iss.C2, 1991-09, pp. : C2-889-C2-895
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Related content
LOW-TEMPERATURE CHEMICAL-VAPOR-DEPOSITION OF SILICON NITRIDE
Le Journal de Physique IV, Vol. 02, Iss. C2, 1991-09 ,pp. :
Simulation of Epitaxial Silicon Chemical Vapor Deposition in Barrel Reactors
Le Journal de Physique IV, Vol. 05, Iss. C5, 1995-06 ,pp. :
2D MODELLING OF SILICON CHEMICAL VAPOR DEPOSITION IN AN IMPINGING JET REACTOR
Le Journal de Physique IV, Vol. 02, Iss. C2, 1991-09 ,pp. :