Publisher: Edp Sciences
E-ISSN: 1764-7177|03|C5|C5-15-C5-18
ISSN: 1155-4339
Source: Le Journal de Physique IV, Vol.03, Iss.C5, 1993-10, pp. : C5-15-C5-18
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Related content
Picosecond photoluminescence of resonantly-excited excitons in GaAs quantum wells
Le Journal de Physique IV, Vol. 03, Iss. C5, 1993-10 ,pp. :
Excited-state excitons in strained quantum wells under pressure
Le Journal de Physique IV, Vol. 03, Iss. C5, 1993-10 ,pp. :
Mott transition of excitons in GaAs-GaAlAs quantum wells
New Journal of Physics, Vol. 14, Iss. 9, 2012-09 ,pp. :
Lifetime of excitons in GaAs quantum wells
Le Journal de Physique IV, Vol. 03, Iss. C5, 1993-10 ,pp. :
FINE STRUCTURE OF EXCITONS IN QUANTUM WELLS
Le Journal de Physique Colloques, Vol. 48, Iss. C5, 1987-11 ,pp. :