On the Deposition Kinetics of the LPCVD Gate Oxides Prepared from SiH4 and O2

Publisher： Edp Sciences

E-ISSN： 1764-7177|05|C5|C5-113-C5-118

ISSN： 1155-4339

Source： Le Journal de Physique IV, Vol.05, Iss.C5, 1995-06, pp. : C5-113-C5-118

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