![](/images/ico/ico_close.png)
![](/images/ico/ico5.png)
Publisher: Edp Sciences
E-ISSN: 1764-7177|01|C6|C6-277-C6-282
ISSN: 1155-4339
Source: Le Journal de Physique IV, Vol.01, Iss.C6, 1991-12, pp. : C6-277-C6-282
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Related content
![](/images/ico/o.png)
![](/images/ico/ico5.png)
![](/images/ico/o.png)
![](/images/ico/ico5.png)
![](/images/ico/ico_close.png)
![](/images/ico/ico5.png)
Detection and Characterization of Precipitates in Annealed Cz Silicon Wafers
Journal de Physique III, Vol. 5, Iss. 9, 1995-09 ,pp. :
![](/images/ico/ico_close.png)
![](/images/ico/ico5.png)
By Kuz’menko R. Ganzha A. Domashevskaya É. Hildebrandt S. Schreiber J.
Physics of the Solid State, Vol. 42, Iss. 12, 2000-12 ,pp. :
![](/images/ico/o.png)
![](/images/ico/ico5.png)
Structure and properties of dislocations in interfaces of bonded silicon wafers
Journal of Physics: Conference Series , Vol. 281, Iss. 1, 2011-02 ,pp. :