Characterization and stressing properties of polysilicon TFTs utilizing oxide films deposited using TEOS

E-ISSN： 1764-7177|11|PR3|Pr3-1037-Pr3-1044

ISSN： 1155-4339

Source： Le Journal de Physique IV, Vol.11, Iss.PR3, 2001-08, pp. : Pr3-1037-Pr3-1044

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