DAFS Study of Strained III-V Epitaxial Semiconductors

E-ISSN： 1764-7177|7|C2|C2-749-C2-751

ISSN： 1155-4339

Source： Le Journal de Physique IV, Vol.7, Iss.C2, 1997-04, pp. : C2-749-C2-751

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

Growth, structure and phase transitions of epitaxial nanowires of III-V semiconductors

Journal of Physics: Conference Series , Vol. 209, Iss. 1, 2010-02 ,pp. : 24-35

IOP Publishing

Access to resources Recommend Favorite

AN ATOM-PROBE STUDY OF III-V COMPOUND SEMICONDUCTORS

Le Journal de Physique Colloques, Vol. 45, Iss. C9, 1984-12 ,pp. : C9-453-C9-458

Edp Sciences

Access to resources Recommend Favorite

III-V Semiconductors and Microelectronics

Revue de Physique Appliquée (Paris), Vol. 22, Iss. 8, 1987-08 ,pp. : 786-786

Edp Sciences

Access to resources Recommend Favorite

PHOTOEMISSION STUDY OF ALLOYS AND HETEROSTRUCTURES OF III-V COMPOUND SEMICONDUCTORS

Le Journal de Physique Colloques, Vol. 48, Iss. C5, 1987-11 ,pp. : C5-45-C5-49

Edp Sciences

Access to resources Recommend Favorite

COMPOSITION FLUCTUATIONS IN III-V SEMICONDUCTORS

Le Journal de Physique Colloques, Vol. 50, Iss. C8, 1989-11 ,pp. : C8-453-C8-458

Edp Sciences

Access to resources Recommend Favorite