Type II narrow double barrier quantum well structures : Γ-X coupling and interface effects

Publisher： Edp Sciences

E-ISSN： 1764-7177|03|C5|C5-225-C5-228

ISSN： 1155-4339

Source： Le Journal de Physique IV, Vol.03, Iss.C5, 1993-10, pp. : C5-225-C5-228

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

Γ-X mixing in type-II GaAs/AlAs short period superlattices

By  

Le Journal de Physique IV, Vol. 03, Iss. C5, 1993-10 ,pp. : C5-237-C5-240

Edp Sciences

Access to resources Recommend Favorite

Electroluminescence of quantum-well structures on type-II InAs/GaSb heterojunctions

By Moiseev K.   Mel’tser B.   Solov’ev V.   Ivanov S.   Mikhailov M.   Yakovlev Yu.   Kop’ev P.  

Technical Physics Letters, Vol. 24, Iss. 6, 1998-06 ,pp. : 477-479

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Interface phonons in asymmetric quantum well structures

By Kinsler P.   Kelsall R.W.   Harrison P.  

Superlattices and Microstructures, Vol. 25, Iss. 1, 1999-01 ,pp. : 163-166

Academic Press

Access to resources Recommend Favorite

Electro-absorption modulator using a type-II quantum well in the In x Ga 1 - x As/InAlAs/InP system

By Lugand C.   Benyattou T.   Guillot G.   Venet T.   Gendry M.   Hollinger G.  

Superlattices and Microstructures, Vol. 23, Iss. 2, 1998-02 ,pp. : 253-259

Academic Press

Access to resources Recommend Favorite

Interface excitons in type-two quantum structures

By  

Le Journal de Physique IV, Vol. 03, Iss. C5, 1993-10 ,pp. : C5-261-C5-264

Edp Sciences

Access to resources Recommend Favorite