Si/Si1-x Gex/Si heterostructure growth by ultraclean low-temperature LPCVD for the fabrication of novel heterodevice

Publisher： Edp Sciences

E-ISSN： 1764-7177|03|C3|C3-403-C3-410

ISSN： 1155-4339

Source： Le Journal de Physique IV, Vol.03, Iss.C3, 1993-08, pp. : C3-403-C3-410

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