Carrier confinement and fabrication effects in GaInAs-InP quantum wires and dots

Publisher： Edp Sciences

E-ISSN： 1764-7177|03|C5|C5-335-C5-338

ISSN： 1155-4339

Source： Le Journal de Physique IV, Vol.03, Iss.C5, 1993-10, pp. : C5-335-C5-338

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