Publisher: Edp Sciences
E-ISSN: 1764-7177|04|C8|C8-385-C8-391
ISSN: 1155-4339
Source: Le Journal de Physique IV, Vol.04, Iss.C8, 1994-09, pp. : C8-385-C8-391
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Related content
Stabilization of boron carbide via silicon doping
Journal of Physics: Condensed Matter, Vol. 27, Iss. 1, 2015-01 ,pp. :
Superconductivity of hexagonal heavily-boron doped silicon carbide
Journal of Physics: Conference Series , Vol. 150, Iss. 5, 2009-03 ,pp. :
Effect of pressure on the elastic properties of silicon carbide
By Davydov S.
Physics of the Solid State, Vol. 46, Iss. 7, 2004-07 ,pp. :
ADHERENCE AND PROPERTIES OF SILICON CARBIDE BASED FILMS ON STEEL
Le Journal de Physique IV, Vol. 02, Iss. C2, 1991-09 ,pp. :