Measurement of the bandgap narrowing in the base of Si homojunction and Si/Si1-xGex heterojunction bipolar transistors from the temperature dependence of the collector current

Publisher： Edp Sciences

E-ISSN： 1764-7177|04|C6|C6-123-C6-126

ISSN： 1155-4339

Source： Le Journal de Physique IV, Vol.04, Iss.C6, 1994-06, pp. : C6-123-C6-126

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