I-V and small signal parameters modelling of ultrasubmicron MOSFETs including the significant electron-velocity overshoot effects, which are enhanced at low temperature

Publisher： Edp Sciences

E-ISSN： 1764-7177|08|PR3|Pr3-21-Pr3-24

ISSN： 1155-4339

Source： Le Journal de Physique IV, Vol.08, Iss.PR3, 1998-06, pp. : Pr3-21-Pr3-24

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

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