MOCVD grown InGaP/GaAs camel-like field-effect transistor for high-breakdown and high-temperature operations

Publisher： Edp Sciences

E-ISSN： 1764-7177|11|PR3|Pr3-951-Pr3-955

ISSN： 1155-4339

Source： Le Journal de Physique IV, Vol.11, Iss.PR3, 2001-08, pp. : Pr3-951-Pr3-955

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