Related content

Growth of porous columnar α-GaN layers on c-plane Al2O3 by MOCVD using Bisazido dimethylaminopropyl gallium as single source precursor

By  

Le Journal de Physique IV, Vol. 11, Iss. PR3, 2001-08 ,pp. : Pr3-683-Pr3-687

Edp Sciences

Access to resources Recommend Favorite

CVD GROWTH AND MORPHOLOGY OF Ti (C, N) WHISKERS

By  

Le Journal de Physique Colloques, Vol. 50, Iss. C5, 1989-05 ,pp. : C5-219-C5-227

Edp Sciences

Access to resources Recommend Favorite

Growth of a-Plane InN Film and Its THz Emission

By Guang-Bing Wang   Guo-Zhong Zhao   Xian-Tong Zheng   Ping Wang   Guang Chen   Xin Rong   Xin-Qiang Wang  

Chinese Physics Letters, Vol. 31, Iss. 7, 2014-07 ,pp. : 77202-77205

IOP Publishing

Access to resources Recommend Favorite

Growth of threaded AlN whiskers by a physical vapor transport method

By Jun Wang   Meng Zhao   Si-Bin Zuo   Wen-Jun Wang  

Chinese Physics B, Vol. 23, Iss. 8, 2014-08 ,pp. : 88103-88107

IOP Publishing

Access to resources Recommend Favorite

Room-temperature ferromagnetism with high magnetic moment in Cu-doped AlN single crystal whiskers

By  

Chinese Physics B, Vol. 24, Iss. 2, 2015-02 ,pp. : 27503-27507

IOP Publishing

Access to resources Recommend Favorite