Characterization of low-dielectric constant SiOCN films synthesized by low pressure chemical vapour deposition

E-ISSN： 1764-7177|11|PR3|Pr3-1005-Pr3-1012

ISSN： 1155-4339

Source： Le Journal de Physique IV, Vol.11, Iss.PR3, 2001-08, pp. : Pr3-1005-Pr3-1012

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

Effects of plasma power and deposition pressure on the properties of the low dielectric constant plasma polymerized cyclohexane thin films deposited by plasma enhanced chemical vapor deposition

Le Journal de Physique IV, Vol. 11, Iss. PR3, 2001-08 ,pp. : Pr3-795-Pr3-802

Edp Sciences

Access to resources Recommend Favorite

Low-pressure chemical vapour deposition of mullite coatings in a cold-wall reactor

Le Journal de Physique IV, Vol. 09, Iss. PR8, 1999-09 ,pp. : Pr8-395-Pr8-402

Edp Sciences

Access to resources Recommend Favorite

Laser type of spectral narrowing in electroluminescent Si/SiO₂superlattices prepared by low-pressure chemical vapour deposition

By Heikkilä L. Kuusela T. Hedman H.

Superlattices and Microstructures, Vol. 26, Iss. 3, 1999-09 ,pp. : 157-169

Academic Press

Access to resources Recommend Favorite

Chemical vapour deposition of nitride and oxynitride dielectric films

Le Journal de Physique IV, Vol. 03, Iss. C3, 1993-08 ,pp. : C3-465-C3-465

Edp Sciences

Access to resources Recommend Favorite

Kinetics of the initial stages of film formation during low pressure chemical vapour deposition of polysilicon by pyrolysis of silane

Le Journal de Physique IV, Vol. 11, Iss. PR3, 2001-08 ,pp. : Pr3-189-Pr3-196

Edp Sciences

Access to resources Recommend Favorite