Rapid coincidence circuit using transistors working in the saturated region.

E-ISSN： 0151-0835|24|S10|189-191

ISSN： 0151-0835

Source： Journal de Physique Appliqué, Vol.24, Iss.S10, 1963-10, pp. : 189-191

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

Fast coincidence circuits using transistors in the avalanche region.

Journal de Physique Appliqué, Vol. 22, Iss. S2, 1961-02 ,pp. : 53-58

Edp Sciences

Access to resources Recommend Favorite

Coincidence circuit using the time-amplitude conversion

Journal de Physique Appliqué, Vol. 20, Iss. S7, 1959-07 ,pp. : 49-54

Edp Sciences

Access to resources Recommend Favorite

Operational Amplifier Circuit Design Using Carbon Nanotube Transistors

Nanoscience & Nanotechnology-Asia, Vol. 3, Iss. 1, 2013-07 ,pp. : 106-113

Bentham Science Publishers

Access to resources Recommend Favorite

Short-Circuit Power Reduction by Using High-Threshold Transistors

By Morgenshtein Arkadiy

Journal of Low Power Electronics and Applications, Vol. 2, Iss. 1, 2012-03 ,pp. : 69-78

MDPI

Access to resources Recommend Favorite

Fast coincidence circuit with time analyser.

Journal de Physique Appliqué, Vol. 18, Iss. S7, 1957-07 ,pp. : 112-115

Edp Sciences

Access to resources Recommend Favorite