New method for the study, by high frequency spectroscopy, of defects in the structure of the semiconductor ZnO.

Publisher: Edp Sciences

E-ISSN: 0368-3842|13|11|589-590

ISSN: 0368-3842

Source: Journal de Physique et le Radium, Vol.13, Iss.11, 1952-11, pp. : 589-590

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