Gunn domain existence in the channel of a saturated GaAs MESFET

Publisher： Edp Sciences

E-ISSN： 0035-1687|13|12|651-654

ISSN： 0035-1687

Source： Revue de Physique Appliquée (Paris), Vol.13, Iss.12, 1978-12, pp. : 651-654

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